P-Channel Tri-Gate FinFETs Featuring $\hbox{Ni}_{1 - y}\hbox{Pt}_{y} \hbox{SiGe}$ Source/Drain Contacts for Enhanced Drive Current Performance-Reference-Cited by-同舟云学术

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P-Channel Tri-Gate FinFETs Featuring $\hbox{Ni}_{1 - y}\hbox{Pt}_{y} \hbox{SiGe}$ Source/Drain Contacts for Enhanced Drive Current Performance

Published:2008-05 Issue:5 Volume:29 Page:438-441
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Lee Rinus Tek-Po,Tan Kian-Ming,Lim Andy Eu-Jin,Liow Tsung-Yang,Samudra Ganesh S.,Chi Dong-Zhi,Yeo Yee-Chia

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/4494611/04494625.pdf?arnumber=4494625

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