Negative Differential Resistance in Buried-Channel $\hbox{Ge}_{x} \hbox{C}_{1

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Negative Differential Resistance in Buried-Channel $\hbox{Ge}_{x} \hbox{C}_{1 - x}$ pMOSFETs

Published:2009-02 Issue:2 Volume:30 Page:136-138
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

En-Shao Liu ,Kelly D.Q.,Donnelly J.P.,Tutuc E.,Banerjee S.K.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/4757318/04749295.pdf?arnumber=4749295

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A hot-emitter transistor based on stimulated emission of heated carriers;Nature;2024-08-14

2. Negative differential resistance in three terminal photodetectors;Applied Physics Letters;2016-06-20

3. Strong room-temperature negative transconductance in an axial Si/Ge hetero-nanowire tunneling field-effect transistor;Applied Physics Letters;2014-08-11

4. Non-volatile memory transistor based on Pt nanocrystals with negative differencial resistance;Journal of Applied Physics;2012-07-15

5. Mobilities and diffusivities in fcc Fe–X (, Au, Cu, Pd and Pt) alloys;Calphad;2010-09

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