TID and DSEE Effects in a Voltage Clamp IC Prototype for Space Applications-Reference-Cited by-同舟云学术

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TID and DSEE Effects in a Voltage Clamp IC Prototype for Space Applications

Published:2023-10-02 Issue: Volume: Page:1-5
ISSN:
Container-title:2023 13th European Space Power Conference (ESPC)
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Author:

Mand Philipp¹,Burkhay Volodymyr²,Rocke André²,Gieselmann Uwe²,Fauth Leon³,Olbrich Markus⁴,Beister Jürgen¹,Landström Sven¹,Tonicello Ferdinando¹,Wicht Bernhard⁴,Friebe Jens⁵

Affiliation:

1. European Space Agency, Directorate of Technology, Engineering and Quality (TEC),Nordwijk,The Netherlands

2. SPACE IC GmbH,Hanover,Germany

3. Leibniz University Hanover, Institute for Drive Systems and Power Electronics,Hanover,Germany

4. Leibniz University Hanover, Institute of Microelectronic Systems,Hanover,Germany

5. University of Kassel,Department of Power Electronics,Kassel,Germany

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10298070/10298112/10413255.pdf?arnumber=10413255

Reference8 articles.

1. Microchip ATMX150RHA Rad-Hard CMOS 150nm cell-based ASIC family Radiation Characterization Test Report Total Dose (TID) and Single Event Effects (SEE);Leduc

2. ESCC Basic Specification No. 22900;Total Dose Steady-State Irradiation Test Method,2016

3. Dose‐rate effects on radiation‐induced bipolar junction transistor gain degradation

4. A precision reference voltage source

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