Mask Bias optimization for NTD lithography process-Reference-Cited by-同舟云学术

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Mask Bias optimization for NTD lithography process

Published:2022-10-21 Issue: Volume: Page:
ISSN:
Container-title:2022 International Workshop on Advanced Patterning Solutions (IWAPS)
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Author:

Yue Liwan¹,Li Yanqiu¹,Mao Zhibiao²,Wu Qiang³,Li Yanli³

Affiliation:

1. School of Optics and Photonics Beijing Institute of Technology,Beijing,China,100081

2. Ningbo Nata Opto-electronic Materials Co. Ltd 21 Qingshan Road, Beilun District,Ningbo city,Zhejiang Province,China

3. Fudan University,School of Microelectronics,Shanghai,China

Funder

National Natural Science Foundation of China

Natural Science Foundation of Jiangsu Province

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9971792/9972241/09972256.pdf?arnumber=9972256

Reference5 articles.

1. Modeling of NTD resist shrinkage;mülders;Proc SPIE 10146 Advances in Patterning Materials and Processes XXXIV,2017

2. Comparison of clear-field and darkfield images with optimized masks;sinn;Proc SPIE 7973 Optical Microlithography XXIV,2011

3. Understanding dissolution behavior of 193nm photoresists in organic solvent developers

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