Frame mark selection, placement, design and simulation

Author:

Yan Binbin1,Jiang Miao1,Liang Di1,Li Liang1,Feng Wei2,Huang Joer2,Wu Dajun2,Lan Andy2,Shi Jiangliu1

Affiliation:

1. Beijing Superstring Academy of Memory Technology,Litho R&D Departments,Beijing,China

2. Changxin Memory Technologies Inc,Litho Departments,Beijing,China

Publisher

IEEE

Reference6 articles.

1. Wafer Alignment Mark manual;ASML Product Documentation ID 50195,0

2. Alignment method of self-aligned double patterning process

3. Overlay mark optimization using the KTD signal simulation system

4. Copper dual-damascene Alignment strategy recommendations;ASML Applications notes ID 95143,0

5. Performance study of new segmented overlay marks for advanced wafer processing

Cited by 1 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Simulation study on the robustness of polar mark for incident light polarization states;2023 International Workshop on Advanced Patterning Solutions (IWAPS);2023-10-26

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