2-D-Nonlinear Electrothermal Model for Investigating the Self-Heating Effect in GAAFET Transistors-Reference-Cited by-同舟云学术

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2-D-Nonlinear Electrothermal Model for Investigating the Self-Heating Effect in GAAFET Transistors

Published:2021-03 Issue:3 Volume:68 Page:954-961
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Belkhiria Maissa^ORCID,Echouchene Fraj,Jaba Nejeh,Bajahzar Abdullah,Belmabrouk Hafedh^ORCID

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/9361759/09329119.pdf?arnumber=9329119

Cited by 16 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Optimization of electrothermal response of GAAFET using Taguchi's approach and an artificial neural network;Case Studies in Thermal Engineering;2024-02

2. Analysis of GAAFET’s transient heat transport process based on phonon hydrodynamic equations;Acta Physica Sinica;2024

3. Effect of specularity parameter and convective coefficient on heat transport in semiconductor devices based on mesoscopic method;Physica B: Condensed Matter;2023-12

4. Enhancing Temperature Immunity of Digital Circuit Against Aging : The Standard Cell Subset Method;2023 IEEE 15th International Conference on ASIC (ASICON);2023-10-24

5. Modeling and Optimization of GAAFET Transistor using Taguchi Approach and Artificial Neural Network (ANN);2023 IEEE International Conference on Artificial Intelligence & Green Energy (ICAIGE);2023-10-12

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