Experimental Characterization of Charge Trapping Dynamics in 100-nm AlN/GaN/AlGaN-on-Si HEMTs by Wideband Transient Measurements
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/16/9146596/09123568.pdf?arnumber=9123568
Cited by 21 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
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2. Exploration on the impact of barrier thickness, gate recess, and lateral scaling on AlGaN/GaN SRL HEMT on silicon for future RF power electronics;Journal of Materials Science: Materials in Electronics;2024-05
3. Inspection of Trapping and Detrapping Dynamics in Fe- and C-doped GaN-based RF HEMTs by Filling Pulse-Dependent DCT Spectroscopy;2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM);2024-03-03
4. Emission and capture characteristics of deep hole trap in n-GaN by optical deep level transient spectroscopy;Journal of Semiconductors;2024-03-01
5. GaN trapping;GaN Transistor Modeling for RF and Power Electronics;2024
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