RESURF n-LDMOS Transistor for Advanced Integrated Circuits in 4H-SiC-Reference-Cited by-同舟云学术

RESURF n-LDMOS Transistor for Advanced Integrated Circuits in 4H-SiC

Published:2020-08 Issue:8 Volume:67 Page:3278-3284
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

WeiBe J.¹^ORCID,Matthus C.²^ORCID,Schlichting H.²,Mitlehner H.²,Erlbacher T.²^ORCID

Affiliation:

1. Department of Electrical Engineering, Electronics and Information Technology, Friedrich–Alexander University Erlangen–Nuremberg (FAU), Erlangen, Germany

2. Fraunhofer Institute for Integrated Systems and Device Technology (IISB), Erlangen, Germany

Funder

German Research Foundation

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/9146596/09132665.pdf?arnumber=9132665

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