Analysis of Total Ionizing Dose Effects Using Electron Holography-Reference-Cited by-同舟云学术

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Analysis of Total Ionizing Dose Effects Using Electron Holography

Published:2024-04 Issue:4 Volume:71 Page:585-590
ISSN:0018-9499
Container-title:IEEE Transactions on Nuclear Science
language:
Short-container-title:IEEE Trans. Nucl. Sci.

Author:

Chang C. T.¹^ORCID,Apsangi P.²^ORCID,Muthuseenu K.³^ORCID,Privat A.⁴^ORCID,Kennedy B.¹,McCartney M. R.⁵,Smith D. J.⁵,Holbert K. E.⁴^ORCID,Barnaby H. J.⁴^ORCID

Affiliation:

1. School of Engineering for Matter, Transport and Energy, Arizona State University, Tempe, AZ, USA

2. Tower Semiconductor, Newport Beach, CA, USA

3. Intel Corporation, Hillsboro, OR, USA

4. School of Electrical, Computer and Energy Engineering, Arizona State University, Tempe, AZ, USA

5. Department of Physics, Arizona State University, Tempe, AZ, USA

Funder

Small Business Technology Transfer (STTR) sub-contract from CFD Research Corporation through Defense Microelectronics Activity

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx7/23/10504930/10414366.pdf?arnumber=10414366

Reference33 articles.

1. An investigation of surface states at a silicon/silicon oxide interface employing metal-oxide-silicon diodes

2. DENSITY OF SiO2–Si INTERFACE STATES

3. Correlating the Radiation Response of MOS Capacitors and Transistors

4. Simple technique for separating the effects of interface traps and trapped‐oxide charge in metal‐oxide‐semiconductor transistors

5. Charge pumping in MOS devices

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