Simulation of NOR-Flash Memory Cells Focusing on Narrow Channel Effects on VTH Dispersion-Reference-Cited by-同舟云学术

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Simulation of NOR-Flash Memory Cells Focusing on Narrow Channel Effects on VTH Dispersion

Published:2006-09 Issue: Volume: Page:
ISSN:
Container-title:2006 International Conference on Simulation of Semiconductor Processes and Devices
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Author:

Kondo Masaki,Nakauchi Takahiro,Ito Sanae,Aoki Nobutoshi,Nakamura Mitsutoshi,Naruke Kiyomi,Ishiuchi Hidemi

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/4061562/4061563/04061597.pdf?arnumber=4061597

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Structure Optimization of 4X NM Nor Flash for Improving Cell Performance;2024 Conference of Science and Technology for Integrated Circuits (CSTIC);2024-03-17

2. Effects of Floating Gate Profile on Cell Characteristics of 4XNM FG-First ETOX Nor Flash Memory;2023 China Semiconductor Technology International Conference (CSTIC);2023-06-26

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