Mode selection in the external cavity of a single-mode lasers microarray (1060nm)
Author:
Affiliation:
1. Centre of Nanoheterostructure Physics, Ioffe Institute,St Petersburg,Russia
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9839664/9839667/09839768.pdf?arnumber=9839768
Reference5 articles.
1. Light Characteristics of Narrow-Stripe High-Power Semiconductor Lasers (1060 nm) Based on Asymmetric AlGaAs/GaAs Heterostructures with a Broad Waveguide
2. Vertical stacks of pulsed (100 ns) mesa-stripe semiconductor lasers with an ultra-wide (800 μm) aperture emitting kilowatt-level peak power at a wavelength of 1060 nm
3. Stable lateral far field of highly dense arrays of uncoupled narrow stripe ridge waveguide 1060 nm lasers;slipchenko;Journal of Lightwave Technology,2021
4. Tunnel-coupled laser diode microarray as a kW-level 100-ns pulsed optical power source ($\lambda=910\ \text{nm}$);slipchenko;IEEE Photonics Technol Lett,2021
5. Near-Field Dynamics of Ultra-Wide-Aperture (800 μm) Diode Lasers Under Nanosecond Pulse Excitation
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