Single bit-line low power 9T static random access memory

Author:

Inamdar Akshatha P,Divya P A,Ravish Aradhya H. V.

Publisher

IEEE

Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Performance Analysis of 9T SRAM using 180nm, 90nm, 65nm, 32nm, 14nm CMOS Technologies;International Journal of Electrical and Electronics Research;2022-06-30

2. Design of High Stability and Low Power 7T SRAM Cell in 32-NM CNTFET Technology;Journal of Circuits, Systems and Computers;2022-05-20

3. A Low-Power and High-Stability 8T SRAM Cell with Diode-Connected Transistors;Journal of Circuits, Systems and Computers;2022-03-16

4. Memory Design and Verification of SRAM-based Energy Efficient Ternary Content Addressable Memory;2021 5th International Conference on Information Systems and Computer Networks (ISCON);2021-10-22

5. A Novel Darlington-Based 8T CNTFET SRAM Cell for Low Power Applications;Journal of Circuits, Systems and Computers;2021-03-31

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