The Study of InP-Based Resonant Tunneling Diode-Reference-Cited by-同舟云学术

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The Study of InP-Based Resonant Tunneling Diode

Published:2023-08-31 Issue: Volume: Page:
ISSN:
Container-title:2023 16th UK-Europe-China Workshop on Millimetre Waves and Terahertz Technologies (UCMMT)
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Author:

Jun Liu¹,Bowen Liu¹,Ruiliang Song¹,Ning Liu¹,Jie Li¹,Shixiong Liang²,Guodong Gu²,Niefeng Sun²

Affiliation:

1. The 54th Research Institute of China Electronics Technology Group Corporation (CETC54),Beijing Research and Development Center,Beijing,China

2. The 13th Research Institute of China Electronics Technology Group Corporation (CETC13),Shijiazhuang,China,050051

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10310306/10310308/10310623.pdf?arnumber=10310623

Reference8 articles.

1. High-Frequency High-Power Operation of Tunnel Diodes

2. High performance microstrip resonant tunneling diode oscillators as terahertz sources[C];wasige;Millimetre Waves and Terahertz Technologies,2017

3. Demonstration of Sub-THz Traveling-Wave Resonant-Tunneling-Diode Oscillators

4. Future of 300 GHz band wireless communications and their enabler, CMOS transceiver technologies

5. Gigabit wireless communication at 300 GHz using resonant tunneling diode detector[C];shiode;Asia-Pacific Microwave Conference,2011

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