A Review on Comparative Analysis of Various Mosfets on The Basis of Electrical Parameters
Author:
Affiliation:
1. Galgotia College of Engineering and Technology,Electronics and Communicaton Engineering,Greater Noida,India
2. Galgotia’s College of Engineering and Technology,Electronics and Communication Engineering,Greater Noida,India
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10150433/10150449/10150488.pdf?arnumber=10150488
Reference66 articles.
1. Analysis of triple metal surrounding gate (TM-SG) III–V nanowire MOSFET for photosensing application
2. Challenges for Nanoscale MOSFETs and Emerging Nanoelectronics
3. Electrostatically doped tunnel CNTFET model for low-power VLSI circuit design
4. Novel gate concepts for MOS devices
5. Overview and status of metal S/D Schottky-barrier MOSFET technology
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