Monolithic integration of AlGaAs/GaAs HBT and GaAs junction-gate floated electron channel field effect transistor using selective MOCVD growth-Reference-Cited by-同舟云学术

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Monolithic integration of AlGaAs/GaAs HBT and GaAs junction-gate floated electron channel field effect transistor using selective MOCVD growth

Published:1996 Issue:9 Volume:6 Page:317-319
ISSN:1051-8207
Container-title:IEEE Microwave and Guided Wave Letters
language:
Short-container-title:IEEE Microw. Guid. Wave Lett.

Author:

Hyunchol Shin ,Jeong-Hwan Son ,Young-Se Kwon

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

General Physics and Astronomy,General Engineering

Link

http://xplorestaging.ieee.org/ielx4/75/11259/00535831.pdf?arnumber=535831

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Design and Analysis of a DC–43.5-GHz Fully Integrated Distributed Amplifier Using GaAs HEMT–HBT Cascode Gain Stage;IEEE Transactions on Microwave Theory and Techniques;2011-02

2. Fabrication of Novel Active Resistor Using Selective Metal Organic Chemical Vapor Deposition (MOCVD) for Monolithic Integration;Japanese Journal of Applied Physics;2001-02-01

3. Correlation between Unirradiated Cell TP53 Protein Levels and Radiosensitivity in MOLT-4 Cells;Radiation Research;1999-06

4. Formation of macroscopic steps during selective area metalorganic chemical vapor deposition on GaAs (0 0 1) vicinal substrates;Journal of Crystal Growth;1997-05

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