Analysis of the Schottky Barriers with Au-Si Diode as Example-Reference-Cited by-同舟云学术

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Analysis of the Schottky Barriers with Au-Si Diode as Example

Published:2022-08 Issue: Volume: Page:
ISSN:
Container-title:2022 2nd International Conference on Frontiers of Electronics, Information and Computation Technologies (ICFEICT)
language:
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Author:

Dong Ao¹,Wu Shaoxiong²,Xu Yang³

Affiliation:

1. Zhejiang University-University of Illinois at Urbana-Champaign Institute, Zhejiang University,Hangzhou,China

2. College of Information Science & Electronic Engineering, Zhejiang University,Hangzhou,China

3. School of Micro-Nano Electronics, Zhejiang University Hangzhou,China

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9951325/9951447/09951583.pdf?arnumber=9951583

Reference11 articles.

1. Accurate electrical characterization of forward AC behavior of real semiconductor diode: Giant negative capacitance and nonlinear interfacial layer

2. Current Transport Through Lead–Borosilicate Interfacial Glass Layers at the Screen–Printed Silver-Silicon Front Contact

3. The first principle of lattice stability of i B metals Cu, Ag and Au [J];hui-jin;Lanzhou Natural Science University,2010

4. Extraction of Schottky diode parameters from forward current‐voltage characteristics

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