A new decoupled algorithm for nonstationary, transient simulations of GaAs MESFETs-Reference-Cited by-同舟云学术

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A new decoupled algorithm for nonstationary, transient simulations of GaAs MESFETs

Published:1992-07 Issue:7 Volume:39 Page:1578-1587
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Yoganathan S.,Banerjee S.K.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx1/16/3789/00141222.pdf?arnumber=141222

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