Amorphous Silicon Single Photon Avalanche Diode Integrated with Memristor for Short Term Memory Based Rapid Passive Quenching-Reference-Cited by-同舟云学术

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Amorphous Silicon Single Photon Avalanche Diode Integrated with Memristor for Short Term Memory Based Rapid Passive Quenching

Published:2024-05-19 Issue: Volume: Page:1-5
ISSN:
Container-title:2024 IEEE International Symposium on Circuits and Systems (ISCAS)
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Author:

Li Zidu¹,Börner Phil David¹,Panda Soumya Shatakshi¹,Müller Maurice²,Bablich Andreas³,Bolívar Peter Haring²,Choubey Bhaskar¹

Affiliation:

1. University of Siegen,Institute of Analogue Circuits and Image Sensors,Siegen,Germany

2. University of Siegen,Institute of High Frequency and Quantum Electronics,Siegen,Germany

3. University of Siegen,Institute of Graphene-Based Nanotechnology,Siegen,Germany

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx8/10557746/10557828/10558387.pdf?arnumber=10558387

Reference16 articles.

1. Megapixel time-gated SPAD image sensor for 2D and 3D imaging applications

2. SPAD Image Sensor With Analog Counting Pixel for Time-Resolved Fluorescence Detection

3. A SPAD-Based QVGA Image Sensor for Single-Photon Counting and Quanta Imaging

4. Selecting Single Photon Avalanche Diode (SPAD) Passive-Quenching Resistance: An Approach

5. A Compact Active Quenching and Recharge Pixel Circuit for Single Photon Imaging Sensors

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