GeCl4-based High Quality Ge epitaxy on Engineered Ge Substrates for Thin Multi-junction Solar Cells
Author:
Affiliation:
1. Umicore,Olen,Belgium
2. imec (partner in EnergyVille),Leuven,Belgium
Funder
European Space Agency (ESA)
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9938432/9938453/09938912.pdf?arnumber=9938912
Reference9 articles.
1. GaInP solar cells grown on Ge-on-Ge engineered substrates
2. Development of germanium-on-germanium engineered substrates for III-V multijunction solar cells
3. Reduced-Pressure Chemical Vapor Deposition of Epitaxial Ge Films on Si(001) Substrates Using GeCl[sub 4]
4. Theoretical and experimental assessment of thinned germanium substrates for III–V multijunction solar cells
5. Surface passivation for germanium photovoltaic cells
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Overview of Engineered Germanium Substrate Development for Affordable Large-Volume Multijunction Solar Cells;IEEE Journal of Photovoltaics;2024-07
2. Wafer‐scale Ge epitaxial foils grown at high growth rates and released from porous substrates for triple‐junction solar cells;Progress in Photovoltaics: Research and Applications;2022-11-08
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