Fluxless Bonding of Silicon to Ag–Copper Using In–Ag With Two UBM Designs

Author:

Kim Jong S.,Wang Pin J.,Lee Chin C.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Electrochemical Liquid‐Liquid‐Solid Growth of Ag‐In Crystals with Liquid Indium Alloy Electrodes;ChemElectroChem;2024-06-27

2. Reliability Improvement of Low-Temperature Sintered Nano-Silver as Die Attachment by Porosity Optimization;IEEE Transactions on Components, Packaging and Manufacturing Technology;2023-08

3. Phase transformation and grain orientation of Cu–Sn intermetallic compounds during low temperature bonding process;Journal of Materials Science: Materials in Electronics;2013-06-27

4. Effect of Ag grain size on high temperature joint formation in Ag-In system;2010 Proceedings 60th Electronic Components and Technology Conference (ECTC);2010

5. Flip-chip silver joints between Si chips and Cu zubstrates made at low temperature;2009 59th Electronic Components and Technology Conference;2009-05

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