Electrical characterization of junctions and bipolar transistors formed with in situ doped low-temperature (800 degrees C) epitaxial silicon
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Published:1991
Issue:1
Volume:38
Page:128-134
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ISSN:0018-9383
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Container-title:IEEE Transactions on Electron Devices
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language:
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Short-container-title:IEEE Trans. Electron Devices
Author:
Ohi S.,Burger W.R.,Reif R.
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials