A semi-empirical model for electroabsorption in GaAs/AlGaAs multiple quantum well modulator structures-Reference-Cited by-同舟云学术

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A semi-empirical model for electroabsorption in GaAs/AlGaAs multiple quantum well modulator structures

Published:1990 Issue:2 Volume:26 Page:296-304
ISSN:0018-9197
Container-title:IEEE Journal of Quantum Electronics
language:
Short-container-title:IEEE J. Quantum Electron.

Author:

lengyel G.,Jelley K.W.,Engelmann R.W.H.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Atomic and Molecular Physics, and Optics

Link

http://xplorestaging.ieee.org/ielx5/3/1701/00044961.pdf?arnumber=44961

Cited by 65 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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3. Atomistic tight binding study of quantum confined Stark effect in GaBi x As1−x /GaAs quantum wells;Journal of Physics: Condensed Matter;2019-07-18

4. Vertical electro-absorption modulator design and its integration in a VCSEL;Journal of Physics D: Applied Physics;2018-03-12

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