High Efficiency GaN HEMT Power Amplifier/Rectifier Module Design Using Time Reversal Duality-Reference-Cited by-同舟云学术

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High Efficiency GaN HEMT Power Amplifier/Rectifier Module Design Using Time Reversal Duality

Published:2015-10 Issue: Volume: Page:
ISSN:
Container-title:2015 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)
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Author:

Honjo Kazuhiko,Ishikawa Ryo

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/7312801/7314445/07314507.pdf?arnumber=7314507

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A 2.0–3.0 GHz GaN HEMT-Based High-Efficiency Rectifier Using Class-EFJ Operating Mode;Electronics;2024-07-16

2. A 2-GHz 79%-PAE Power Amplifier with a Novel Harmonic Tuning Circuit Using Only CRLH TLs;2021 51st European Microwave Conference (EuMC);2022-04-04

3. Development of Class-R Rectifier for Microwave Wireless Power Transmission to EV trucks;2021 IEEE Wireless Power Transfer Conference (WPTC);2021-06-01

4. Design Method of Self-Driving RF-DC Rectifier Based on Waveform-Guided Solutions to Passive Matching Network;IEEE Transactions on Power Electronics;2019-07

5. Waveform-Distance Based Design of 5.8-GHz Self-Synchronous RF-DC Rectifier through Microstrip-Line Coupler;2019 International Conference on Microwave and Millimeter Wave Technology (ICMMT);2019-05

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