A K-Band 5W Doherty Amplifier MMIC Utilizing 0.15µm GaN on SiC HEMT Technology-Reference-Cited by-同舟云学术

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A K-Band 5W Doherty Amplifier MMIC Utilizing 0.15µm GaN on SiC HEMT Technology

Published:2012-10 Issue: Volume: Page:
ISSN:
Container-title:2012 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)
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Author:

Campbell Charles F.,Tran Kim,Kao Ming-Yih,Nayak Sabyasachi

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/6340039/6340047/06340057.pdf?arnumber=6340057

Cited by 27 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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2. Analysis of Doherty Power Amplifier Matching Assisted by Physics-Based Device Modelling;Electronics;2023-05-04

3. An AM-PM Compensation of Cross-Coupled Capacitance Neutralization Technique in a Differential Power Amplifier;IEICE Transactions on Electronics;2022-10-01

4. A GaN-SiC MMIC Doherty Power Amplifier For K-band Wireless Communications;2022 24th International Microwave and Radar Conference (MIKON);2022-09-12

5. A Fully Integrated Front-End MMIC Based on GaN Doherty Power Amplifier for Mm-Wave 5G;2022 International Conference on Microwave and Millimeter Wave Technology (ICMMT);2022-08-12

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