Author:
Piotrowicz S.,Jardel O.,Jacquet J.-C.,Lancereau D.,Aubry R.,Morvan E.,Sarazin N.,Dufraisse J.,Dua C.,Oualli M.,Chartier E.,Poisson M. A. Di-Forte,Gaquière C.,Delage S. L.
Cited by
1 articles.
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1. InAlN/GaN HEMTs based L-band high-power packaged amplifiers;International Journal of Microwave and Wireless Technologies;2014-02-25