Author:
Kosaka N.,Uchida H.,Noto H.,Yamanaka K.,Nakayama M.,Kanaya K.,Nogami Y.,Inoue A.,Hirano Y.
Cited by
4 articles.
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1. An ASM-Based Semiempirical Model for AlGaN/GaN Power HEMTs With p-GaN Gate;IEEE Transactions on Electron Devices;2024-07
2. A High Efficient Solid State Power Amplifier at 3.5 GHz for Wireless Communication;2024 International Conference on Smart Systems for applications in Electrical Sciences (ICSSES);2024-05-03
3. S-Band 300-W GaN HEMT Harmonic-Tuned Internally-Matched Power
Amplifier;The Journal of Korean Institute of Electromagnetic Engineering and
Science;2018-04
4. InAlN/GaN HEMTs based L-band high-power packaged amplifiers;International Journal of Microwave and Wireless Technologies;2014-02-25