Cooling Limits for GaN HEMT Technology-Reference-Cited by-同舟云学术

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Cooling Limits for GaN HEMT Technology

Published:2013-10 Issue: Volume: Page:
ISSN:
Container-title:2013 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)
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Author:

Won Yoonjin,Cho Jungwan,Agonafer Damena,Asheghi Mehdi,Goodson Kenneth E.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/6657107/6659174/06659222.pdf?arnumber=6659222

Cited by 30 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Investigation of DC and RF Characteristics of AlGaN/GaN HEMT With Various Planar Distributed Channel Division;IEEE Transactions on Electron Devices;2024-08

2. Investigation of Gallium Nitride Based HEMTs with Thermal Dissipation;Advanced Electronic Materials;2024-06-28

3. Improved RF power performance of AlGaN/GaN HEMT on silicon with planar distributed channel;Solid-State Electronics;2023-04

4. AlN/diamond interface nanoengineering for reducing thermal boundary resistance by molecular dynamics simulations;Applied Surface Science;2023-04

5. Three-sensor 3ω-2ω method for the simultaneous measurement of thermal conductivity and thermal boundary resistance in film-on-substrate heterostructures;Journal of Applied Physics;2023-01-27

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