Theoretical investigation of carrier transport and recombination processes for deep UV (Al,Ga)N light emitters-Reference-Cited by-同舟云学术

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Theoretical investigation of carrier transport and recombination processes for deep UV (Al,Ga)N light emitters

Published:2023-09-18 Issue: Volume: Page:
ISSN:
Container-title:2023 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)
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Author:

Finn Robert¹,O’Donovan Michael²,Farrell Patricio²,Streckenbach Timo²,Moatti Julien³,Koprucki Thomas²,Schulz Stefan¹

Affiliation:

1. University College Cork,Tyndall National Institute,Cork,Ireland,T12 R5CP

2. Weierstrass Institute (WIAS),Berlin,Germany,10117

3. Inria, Université de Lille, CNRS, UMR 8524 - Laboratoire Paul Painleve,Lille,France,F-59000

Funder

Sustainable Energy Authority of Ireland

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10273219/10273448/10273485.pdf?arnumber=10273485

Reference8 articles.

1. Modeling the electrical degradation of AlGaN-based UV-C LEDs by combined deep-level optical spectroscopy and TCAD simulations

2. Localization landscape theory of disorder in semiconductors. III. Application to carrier transport and recombination in light emitting diodes

3. Impact of random alloy fluctuations on the electronic and optical properties of (Al,Ga)N quantum wells: Insights from tight-binding calculations

4. Strongly localized carriers in Al-rich AlGaN/AlN single quantum wells grown on sapphire substrates;frankerl;J Appl Phys,2020

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