On the impact of Ag doping on performance and reliability of GeS<inf>2</inf>-based Conductive Bridge Memories-Reference-Cited by-同舟云学术

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On the impact of Ag doping on performance and reliability of GeS2-based Conductive Bridge Memories

Published:2012-09 Issue: Volume: Page:
ISSN:
Container-title:2012 Proceedings of the European Solid-State Device Research Conference (ESSDERC)
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Author:

Vianello E.,Cagli C.,Molas G.,Souchier E.,Blaise P.,Carabasse C.,Rodriguez G.,Jousseaume V.,De Salvo B.,Longnos F.,Dahmani F.,Verrier P.,Bretegnier D.,Liebault J.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/6331298/6343319/06343387.pdf?arnumber=6343387

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Variability-aware modeling of electrochemical metallization memory cells;Neuromorphic Computing and Engineering;2024-08-26

2. Compositional, Structural and Morphological Analyses of Bulk GeS Alloy and its Thin Films;Materials Science Forum;2021-07-20

3. Initialization process of Cu-based WO x conductive bridge RAM investigated via in situ transmission electron microscopy;Japanese Journal of Applied Physics;2020-03-16

4. Conductive-bridging random-access memories for emerging neuromorphic computing;Nanoscale;2020

5. Overview of Resistive Random Access Memory (RRAM): Materials, Filament Mechanisms, Performance Optimization, and Prospects;physica status solidi (RRL) – Rapid Research Letters;2019-05-28

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