A Comprehensive Analysis on the Performance of SiC and GaN Devices
Author:
Affiliation:
1. School of Electrical Engineering, KIIT Deemed to be University,Bhubaneswar,India
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9850966/9850971/09851186.pdf?arnumber=9851186
Reference24 articles.
1. AlGaN/GaN Power HFET on Silicon Substrate With Source-Via Grounding (SVG) Structure
2. State of the art and the future of wide band-gap devices;kaminski;Power Electronics and Applications 2009 EPE'09 13th European Conference on,0
3. GaN, SiC and Wide Band Gap (WBG) material for power electronics applications;coffa;Yole Development,2015
4. Recent advances on dielectrics technology for SiC and GaN power devices
5. High-Density Power Conversion and Wide-Bandgap Semiconductor Power Electronics Switching Devices
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