GaN-Based Power Flip-Chip LEDs With an Internal ESD Protection Diode on Cu Sub-Mount-Reference-Cited by-同舟云学术

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GaN-Based Power Flip-Chip LEDs With an Internal ESD Protection Diode on Cu Sub-Mount

Published:2010-05 Issue:2 Volume:33 Page:433-437
ISSN:1521-3323
Container-title:IEEE Transactions on Advanced Packaging
language:
Short-container-title:IEEE Trans. Adv. Packag.

Author:

Sun Y X,Chen W S,Hung S C,Lam K T,Liu C H,Shoou-Jinn Chang

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx5/6040/5458300/05405053.pdf?arnumber=5405053

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Improvement in electrostatic discharge robustness of a gallium‐nitride‐based flip‐chip high‐electron mobility transistor with a metal–insulator–metal capacitor structure;IEEJ Transactions on Electrical and Electronic Engineering;2019-03-12

2. A Screen Method for the Mass-Production of the Small-Size and Side-View LED Package;Crystals;2018-08-31

3. Visible Flip-Chip Light-Emitting Diodes on Flexible Ceramic Substrate With Improved Thermal Management;IEEE Electron Device Letters;2016-05

4. Enhanced Electrostatic Discharge Reliability in GaN-Based Light-Emitting Diodes by the Electrode Engineering;Journal of Display Technology;2014-10

5. Transient voltage suppressor diode designed for the protection of high-brightness GaN-based LEDs from various electrostatic discharge shocks;Journal of the Korean Physical Society;2014-10

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