Design and Comparison of Wideband Cascode Low Noise Amplifier using GAA-JLFET and GAA-NC-JLFET for RFIC Applications
Author:
Affiliation:
1. VIT-AP University,School of Electronics Engineering,Near Vijayawada,India,522237
2. National Yunlin University of Science and Technology,Department of Electronic Engineering,Douliu,Taiwan,ROC
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10134757/10134565/10135058.pdf?arnumber=10135058
Reference15 articles.
1. A highly linear RF mixer using gate-all-around junctionless transistor
2. Performance analysis of low noise amplifiers using junction less GAA TFET and conventional MOSFET;jasparvinithasundari;International Journal of Recent Technology and Engineering,2019
3. Impact of tunnel gate process variations on analog/radio frequency (microwave) and small signal parameters of hetero‐material tunneling interfaced charge plasma junctionless tunnel field effect transistor
4. High-K Spacer Dual-Metal Gate Stack Underlap Junctionless Gate All Around (HK-DMGS-JGAA) MOSFET for high frequency applications
5. Design Optimization of Single-/Dual-Band FET LNAs Using Noise Transformation Matrix
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