Design of Low Inductance Busbar for 500 kVA Three-Level ANPC Converter-Reference-Cited by-同舟云学术

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Design of Low Inductance Busbar for 500 kVA Three-Level ANPC Converter

Published:2019-09 Issue: Volume: Page:
ISSN:
Container-title:2019 IEEE Energy Conversion Congress and Exposition (ECCE)
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Author:

Gui Handong,Chen Ruirui,Niu Jiahao,Zhang Zheyu,Wang Fred,Tolbert Leon M.,Costinett Daniel J.,Blalock Benjamin J.,Choi Benjamin B.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/8897530/8911826/08912605.pdf?arnumber=8912605

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Design and Demonstration of a Medium-Voltage High-Power All Silicon Carbide ANPC Converter With Optimized Busbar Architecture;IEEE Journal of Emerging and Selected Topics in Power Electronics;2024-06

2. Optimal Busbar Design for the Press-Packed IGBT-Based Modular Multilevel Converter Submodule Considering Both Normal and Fault Ride-Through Conditions;IEEE Canadian Journal of Electrical and Computer Engineering;2024

3. PCB Layout Evaluation of GaN HEMT Power Loop;2023 IEEE 2nd International Power Electronics and Application Symposium (PEAS);2023-11-10

4. High Power Converter Busbar in the New Era of Wide-Band-Gap Power Semiconductor;2023 IEEE Energy Conversion Congress and Exposition (ECCE);2023-10-29

5. High-Density High-Power Converter using 3.3-kV All-Silicon Carbide Modules;2023 IEEE Energy Conversion Congress and Exposition (ECCE);2023-10-29

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