Improved Off-Current and Modeling in Sub-430 °C Si p-i-n Selector for Unipolar Resistive Random Access Memory
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Published:2015-12
Issue:12
Volume:36
Page:1310-1313
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ISSN:0741-3106
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Container-title:IEEE Electron Device Letters
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language:
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Short-container-title:IEEE Electron Device Lett.
Author:
Mandapati R.,Shrivastava S.,Sushama S.,Saha B.,Schulze J.,Ganguly U.
Funder
Department of Science and Technology (DST)
Center of Excellence in Nanoelectronics (CEN)
Department of Electronics and IT (DeitY), India
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials