Sub-Bandgap Photonic Capacitance-Voltage Method for Characterization of the Interface Traps in Low Temperature Poly-Silicon Thin-Film Transistors
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Published:2015-04
Issue:4
Volume:36
Page:339-341
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ISSN:0741-3106
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Container-title:IEEE Electron Device Letters
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language:
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Short-container-title:IEEE Electron Device Lett.
Author:
Hwang Jun Seok,Bae Hagyoul,Lee Jungmin,Choi Sung-Jin,Kim Dae Hwan,Kim Dong Myong
Funder
National Research Foundation of Korea within the Korea Government through the Ministry of Environment, Science and Technology
Global Ph.D. Fellowship Program
BK21+
SYNOPSIS and IC Design Education Center
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Cited by
1 articles.
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