Ultra Large-Grain Poly-Si Thin-Film Transistor Using NiSi2 Seeding Si-Amplified Layer
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Published:2015-08
Issue:8
Volume:36
Page:778-780
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ISSN:0741-3106
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Container-title:IEEE Electron Device Letters
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language:
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Short-container-title:IEEE Electron Device Lett.
Author:
Jae Hyo Park ,Hyung Yoon Kim ,Chang Woo Byun ,Seung Ki Joo
Funder
Eui-San Research Center and Research Institute of Advanced Materials, Seoul National University, Seoul, Korea
BK21PLUS SNU Materials Division for Educating Creative Global Leaders
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials