Common Emitter Current and Voltage Gain in III-Nitride Tunneling Hot Electron Transistors
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Published:2015-05
Issue:5
Volume:36
Page:436-438
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ISSN:0741-3106
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Container-title:IEEE Electron Device Letters
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language:
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Short-container-title:IEEE Electron Device Lett.
Author:
Yang Zhichao,Nath Digbijoy N.,Zhang Yuewei,Khurgin Jacob B.,Rajan Siddharth
Funder
Office of Naval Research, Arlington, VA, USA, through the Multidisciplinary University Research Initiative Program
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials