IRE Standards on Solid-State Devices: Measurement of Minority-Carrier Lifetime in Germanium and Silicon by the Method of Photoconductive Decay

Author:

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Crystal Characterization;Semiconductor Silicon Crystal Technology;1989

2. Residual damage to an atomically cleaned low‐temperature‐annealed Si(100) surface;Applied Physics Letters;1980-09-15

3. Influence of heat treatment of silicon on minority carrier lifetime;Czechoslovak Journal of Physics;1970-02

4. RADIATIVE RECOMBINATION LIFETIMES IN LASER‐EXCITED SILICON;Applied Physics Letters;1966-02-15

5. Measurement methods, part D;Impurities and Defects in Group IV Elements, IV-IV and III-V Compounds. Part a: Group IV Elements

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