A Supply Voltage Insensitive Two-Transistor Temperature Sensor With PTAT/CTAT Outputs Based on Monolithic GaN Integrated Circuits
Author:
Affiliation:
1. Department of Electrical and Electronic Engineering, Xi'an Jiaotong-Liverpool University, Suzhou, China
2. Department of Electrical Engineering and Electronics, University of Liverpool, Liverpool, U.K.
Funder
National Key R&D Program of China
Science and Technology Program of Suzhou
XJTLU Key Program Special Fund
Research Development Fund
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering
Link
http://xplorestaging.ieee.org/ielx7/63/10197471/10160167.pdf?arnumber=10160167
Reference17 articles.
1. Monolithic integration design of GaN-based power chip including gate driver for high-temperature DC–DC converters
2. Improving high frequency DC-DC converter performance with monolithic half bridge GaN ICs
3. Integrated Over-Temperature Protection Circuit for GaN Smart Power ICs
4. Monolithic Comparator and Sawtooth Generator of AlGaN/GaN MIS-HEMTs With Threshold Voltage Modulation for High-Temperature Applications
5. Self-Aging-Prognostic GaN-Based Switching Power Converter Using TJ -Independent Online Condition Monitoring and Proactive Temperature Frequency Scaling
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