A Concept for Detection of Humidity-Driven Degradation of IGBT Modules
Author:
Funder
Bundesministerium für Wirtschaft und Energie
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering
Link
http://xplorestaging.ieee.org/ielx7/63/9519819/09459503.pdf?arnumber=9459503
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. SiC IGBT degradation mechanism investigation under HV-H3TRB tests;Journal of Power Electronics;2023-12-15
2. Analysis of Blocking Capability Failure Mechanism in IGBT Module Under High Salt Spray Environment;IEEE Transactions on Dielectrics and Electrical Insulation;2023-12
3. Humidity related failure mechanism of IGBTs considering dynamic avalanche;Microelectronics Reliability;2023-12
4. Reliability of SiC MOSFET Power Modules under Consecutive H3TRB and Power Cycling Stress;Materials Science Forum;2023-06-06
5. A Perspective on Power Converters Design: Stability and Reliability Aspects;2023 11th International Conference on Power Electronics and ECCE Asia (ICPE 2023 - ECCE Asia);2023-05-22
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