An Adaptive Method to Reduce Undershoots and Overshoots in Power Switching Transistors Through a Low-Complexity Active Gate Driver
Author:
Affiliation:
1. Department of Electronics and Telecommunications, Politecnico di Torino, Turin, Italy
Funder
Power Electronics Innovation Center, Polytechnic University of Turin
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering
Link
http://xplorestaging.ieee.org/ielx7/63/9998566/09944895.pdf?arnumber=9944895
Reference36 articles.
1. Frequency-Selective Reduction of Power Electronic Switching Noise by Applying Synthesized Gate Signals
2. FDB031N08 datasheet,2022
3. An Intelligent Versatile Model-Based Trajectory-Optimized Active Gate Driver for Silicon Carbide Devices
4. IPB065N15N3 datasheet,2020
5. A Review of Switching Slew Rate Control for Silicon Carbide Devices Using Active Gate Drivers
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