A Novel Evaluation Methodology for the Reliability and Lifetime of 200 mm E-Mode GaN-on-Si Power HEMTs-Reference-Cited by-同舟云学术

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A Novel Evaluation Methodology for the Reliability and Lifetime of 200 mm E-Mode GaN-on-Si Power HEMTs

Published:2023-05 Issue:5 Volume:38 Page:6073-6080
ISSN:0885-8993
Container-title:IEEE Transactions on Power Electronics
language:
Short-container-title:IEEE Trans. Power Electron.

Author:

Shen Jingyu¹,Yang Chao²^ORCID,Jing Liang¹,Li Ping¹^ORCID,Wu Hao³^ORCID,Huang Zhiyong¹^ORCID,Hu Shengdong¹^ORCID

Affiliation:

1. School of Microelectronics and Communication Engineering, Chongqing University, Chongqing, China

2. GaNext Technology Company Limited, Zhuhai, China

3. National Laboratory of Science and Technology on Analog Integrated Circuits, Chongqing, China

Funder

National Natural Science Foundation of China

Natural Science Foundation Project of CQ CSTC

National Laboratory of Science and Technology on Analog Integrated Circuit

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx7/63/10067244/10021987.pdf?arnumber=10021987

Reference25 articles.

1. High-Voltage and Low-Leakage AlGaN/GaN Tri-Anode Schottky Diodes With Integrated Tri-Gate Transistors

2. Investigating the Current Collapse Mechanisms of p-GaN Gate HEMTs by Different Passivation Dielectrics

3. Foundry process qualification guidelines,2014

4. Proposal of a GaN/SiC Hybrid Field-Effect Transistor for Power Switching Applications

5. Interface Charge Effects on 2-D Electron Gas in Vertical-Scaled Ultrathin-Barrier AlGaN/GaN Heterostructure

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