Short-Circuit Behavior and Voltage Redistribution of IGBTs in Bridge Structures-Reference-Cited by-同舟云学术

Short-Circuit Behavior and Voltage Redistribution of IGBTs in Bridge Structures

Author:

Yang Yixuan¹^ORCID,Wu Yilin¹,Li Xuebao¹^ORCID,Zhao Zhibin¹^ORCID,Zhou Junchuan²,He Zhiyuan²,Cui Xiang¹^ORCID,Tang Guangfu²

Affiliation:

1. State Key Laboratory of Alternate Electrical Power System with Renewable Energy Sources, North China Electric Power University, Beijing, China

2. State Key Laboratory of Advanced Power Transmission Technology, State Grid Smart Grid Research Institute Co. Ltd., Beijing, China

Funder

National Key Research and Development Program of China

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

Reference30 articles.

2. Simulation study on collector side filament formation at short-circuit in IGBTs;bhojani;Proc Int Seminar Power Semicond,2016

3. Short circuit III in high power IGBTs;lutz;Proc 13th Eur Conf Power Electron Appl,2009

4. IGBT self-turn-off under short-circuit-condition;basler;Proc Int Semin Power Semicond,2010

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