Short-Circuit Capability Optimization of Press-Pack IGBT by Improving Active Edge Heat Dissipation-Reference-Cited by-同舟云学术

Short-Circuit Capability Optimization of Press-Pack IGBT by Improving Active Edge Heat Dissipation

Published:2023-05 Issue:5 Volume:38 Page:6143-6156
ISSN:0885-8993
Container-title:IEEE Transactions on Power Electronics
language:
Short-container-title:IEEE Trans. Power Electron.

Author:

Yu Yue¹^ORCID,Li Hui¹^ORCID,Yao Ran¹^ORCID,Iannuzzo Francesco²^ORCID,Zhu Zheyan¹,Chen Xianping¹^ORCID

Affiliation:

1. State Key Laboratory of Power Transmission Equipment & System Security and New Technology, School of Electrical Engineering, Chongqing University, Chongqing, China

2. Department of Energy Technology, Aalborg University, Aalborg, Denmark

Funder

National Natural Science Foundation of China – State Grid Corporation Joint Fund for Smart Grid

Fundamental Research Funds for the Central Universities

State Key Laboratory of Advanced Power Transmission Technology

Graduate Research and Innovation Foundation of Chongqing

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx7/63/10067244/10045055.pdf?arnumber=10045055

Reference29 articles.

1. Failure mechanism and improvement potential of IGBT's short circuit operation;hille;Proc Int Symp Power Semiconductor Devices and IC s,2010

2. Temperature-Dependent Short-Circuit Capability of Silicon Carbide Power MOSFETs

3. A Mitigation Strategy for the Short-Circuit Degradation in SiC MOSFETs

4. A study on the short-circuit capability of field-stop igbts

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