Creep Effect on the Crack Growth Rate of Wire Bonds in IGBT Power Modules-Reference-Cited by-同舟云学术

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Creep Effect on the Crack Growth Rate of Wire Bonds in IGBT Power Modules

Published:2023 Issue: Volume: Page:1-11
ISSN:0885-8993
Container-title:IEEE Transactions on Power Electronics
language:
Short-container-title:IEEE Trans. Power Electron.

Author:

Ouhab Merouane¹^ORCID,Degrenne Nicolas²^ORCID,Ito Yusaku³

Affiliation:

1. Ille-et-Vilaine, Mitsubishi Electric R&D Centre Europe BV Rennes, Rennes, France

2. Power Electronic Systems, Mitsubishi Electric R&D Centre Europe BV Rennes, Rennes, France

3. Mitsubishi Electric Corporation Advanced Technology R and D Center, Osaka, Japan

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx7/63/4359240/10251004.pdf?arnumber=10251004

Reference41 articles.

1. Damage Evolution in Al Wire Bonds Subjected to a Junction Temperature Fluctuation of 30 K

2. Cyclic J-integral: Numerical and analytical investigations for surface cracks in weldments

3. Experimental Investigation on the Effects of Narrow Junction Temperature Cycles on Die-Attach Solder Layer in an IGBT Module

4. Fatigue Crack Growth During Gross Plasticity and the J-Integral

5. Double-sided low-temperature joining technique for power cycling capability at high temperature

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1. In Situ Monitoring Chip Failure in Multichip IGBT Modules Using Turn-On Delay Time Extracted From Auxiliary Emitter Voltage;IEEE Journal of Emerging and Selected Topics in Power Electronics;2024-06

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