Short-Circuit Characteristic of Single Gate Driven SiC MOSFET Stack and Its Improvement With Strong Antishort Circuit Fault Capabilities
Author:
Affiliation:
1. Department of Energy Technology, Aalborg University, Aalborg, Denmark
Funder
Center of Digitalized Electronics
Paul Due Jensen Foundation
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering
Link
http://xplorestaging.ieee.org/ielx7/63/9837805/09795948.pdf?arnumber=9795948
Reference31 articles.
1. A Junction Temperature-based PSpice Short-circuit Model of SiC MOSFET Considering Leakage Current
2. A Temperature-Dependent SPICE Model of SiC Power MOSFETs for Within and Out-of-SOA Simulations
3. The Two-Dimensional Short-Circuit Detection Protection For SiC MOSFETs in Urban Rail Transit Application
4. Short-Circuit Capability Prediction and Failure Mode of Asymmetric and Double Trench SiC MOSFETs
5. Self-Adaptive Active Gate Driver for IGBT Switching Performance Optimization Based on Status Monitoring
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1. Analysis of SiC MOSFETs Short-Circuit behavior in Half Bridge Configuration during Shoot-Through Event;2023 IEEE Energy Conversion Congress and Exposition (ECCE);2023-10-29
2. Design of a Non-destructive Device Test Platform Capable of Double-pulse Tests and Short-circuit Tests with Fast Overcurrent Protection for Wide Band-gap Devices;2023 25th European Conference on Power Electronics and Applications (EPE'23 ECCE Europe);2023-09-04
3. A Cost-Effective DC Circuit Breaker With Series-Connected Power Devices Using a Single Gate Driver;IEEE Access;2023
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