Component-Level Semiconductor Loss Balancing for IGBT Based High Power MMC Through Insertion Index Modification-Reference-Cited by-同舟云学术

Component-Level Semiconductor Loss Balancing for IGBT Based High Power MMC Through Insertion Index Modification

Published:2022-12 Issue:12 Volume:37 Page:14781-14794
ISSN:0885-8993
Container-title:IEEE Transactions on Power Electronics
language:
Short-container-title:IEEE Trans. Power Electron.

Author:

Xu Bin¹^ORCID,Tu Li¹,Gong Shaoyan¹,Wang Gaoyong¹,Gao Chong¹^ORCID,He Zhiyuan¹

Affiliation:

1. State Key Laboratory of Advance Power Transmission Technology and Beijing Key Laboratory of High Power Electronic, State Grid Smart Grid Research Institute Co., Ltd., Beijing, China

Funder

State Grid Corporation of China

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx7/63/9970584/09849049.pdf?arnumber=9849049

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5. Parameters design for modular multilevel converter (MMC);gunico;Proc Brazilian Power Electronics Conference,2013

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