Extending Current Shunt Bandwidth for Accurate Switching Loss Evaluation of Wide-Bandgap Devices
Author:
Affiliation:
1. Aero-Power Sci-Tech Center, Nanjing University of Aeronautics and Astronautics, Nanjing, China
2. Navitas Semiconductor Inc., Shanghai, China
Funder
National Natural Science Foundation of China
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Link
http://xplorestaging.ieee.org/ielx8/63/10679334/10614841.pdf?arnumber=10614841
Reference24 articles.
1. An Ultra-High Efficiency High Power Density 140W PD3.1 AC-DC Adapter Using GaN Power ICs
2. A High-Efficiency High-Density Wide-Bandgap Device-Based Bidirectional On-Board Charger
3. A High Frequency High Efficiency GaN Based Bi-Directional 48V/12V Converter with PCB Coupled Inductor for Mild Hybrid Vehicle
4. Evaluation and applications of 600V/650V enhancement-mode GaN devices
5. Methodology for Wide Band-Gap Device Dynamic Characterization
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