A Novel Detachable Gate Driver Unit With Ultralow Inductance for Integrated Gate Commutated Thyristor

Author:

Shang Jie1,Chen Zhengyu2ORCID,Zhao Biao1ORCID,Yu Zhanqing1ORCID,Wu Jinpeng1,Dong Lin2,Zeng Rong1ORCID

Affiliation:

1. Department of Electrical Engineering, Tsinghua University, Beijing, China

2. DC Research Center, Sichuan Energy Internet Research Institute, Chengdu, China

Funder

National Natural Science Foundation of China

State Grid Joint Fund for Smart Grid

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Reference7 articles.

1. An Advanced 4-in Integrated Emitter Turn-off Thyristor With Ultralow Commutation Impedance to Achieve 8 kA Turn-off Capability: Comprehensive Analysis, Design, and Experiments

2. IGCTs: High-Power Technology for power electronics applications

3. Sandwich design of high-power thyristor based devices with integrated MOSFET structure;bragard;Proc 14th Eur Conf Power Electron Appl,2011

4. Stray Impedance Measurement and Improvement of High-Power IGCT Gate Driver Units

5. The internally commutated thyristor - A new GCT with integrated turn-off unit;koellensperger;Proc 4th Int Conf Integr Power Syst,2006

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