Quasi-Flying Gate Concept Used for Short-Circuit Detection on SiC Power MOSFETs Based on a Dual-Port Gate Driver-Reference-Cited by-同舟云学术

Quasi-Flying Gate Concept Used for Short-Circuit Detection on SiC Power MOSFETs Based on a Dual-Port Gate Driver

Published:2023-06 Issue:6 Volume:38 Page:6934-6938
ISSN:0885-8993
Container-title:IEEE Transactions on Power Electronics
language:
Short-container-title:IEEE Trans. Power Electron.

Author:

Picot-Digoix Mathis¹^ORCID,Richardeau Frédéric²^ORCID,Blaquière Jean-Marc²,Vinnac Sebastien²^ORCID,Azzopardi Stéphane¹,Le Thanh-Long¹^ORCID

Affiliation:

1. Safran Tech, Paris Saclay, France

2. Laboratoire Plasma et Conversion d'Energie (LAPLACE), Université de Toulouse, CNRS, l'Institut National Polytechnique de Toulouse (INPT), l'Université Toulouse III Paul Sabatier (UPS), Toulouse, France

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx7/63/10103359/10075505.pdf?arnumber=10075505

Reference15 articles.

1. Physical Origin of the Gate Current Surge During Short-Circuit Operation of SiC MOSFET

2. A Smart Gate Driver for SiC Power MOSFETs with Aging Compensation and Ringing Suppression

3. Short-circuit evaluation and overcurrent protection for SiC power MOSFETs

4. Towards a safe failure mode under short-circuit operation of power SiC MOSFET using optimal gate source voltage depolarization

5. Behavior of SiC MOSFET under Short-Circuit during the On-State

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